NTHS5404T1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTHS5404T1G
Datasheet:
Description:
MOSFETs ChipFET-8 SMD/SMT N-Channel number of channels:1 1.3 W 20 V Continuous Drain Current (ID):5.2 A 18 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 20 V |
| Length | 3.1 mm |
| Width | 1.7 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Height | 1.1 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 5.2 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 1.3 W |
| Power Dissipation | 1.3 W |
| Threshold Voltage | 600 mV |
| Number of Channels | 1 |
| Input capacitance | 740 pF |
| Continuous Drain Current (ID) | 5.2 A |
| Rds On Max | 30 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 50 ns |
| Element Configuration | Single |
| Fall Time | 7 ns |
| Rise Time | 7 ns |
| Dual Supply Voltage | 20 V |
| Gate Charge | 18 nC |
| Drain to Source Resistance | 25 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 600 mV |
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